LONGi has achieved a world record conversion efficiency of 26.12 percent for its p-type silicon heterojunction (HJT) cells, confirming the feasibility of low-cost HJT mass production technology.
LONGi achieved the record in testing carried out by the Institute for Solar Energy Research (ISFH) in Hamelin, Germany. LONGi achieved the record on full-size (M6, 274.3cm2) gallium-doped p-type monocrystalline wafers and is the highest record for p-type cell efficiency to date.
The cell efficiency is 0.65 percent higher than that of 25.47 percent released earlier this year. The LONGi R&D team has enhanced the crystal pulling process in response to demand for performance indicators for p-HJT wafers, such as resistivity and lifespan.
The efficiency of the cell has significantly improved in terms of short-circuit current (Isc), open-circuit voltage (Voc) and fill-factor (FF), with increases of 1.06 percent, 0.3 percent, and 1.1 percent respectively, due to developments in interface passivation and window layer micro crystallization processes.
In 2021 alone, LONGi broke the world record for cell conversion efficiency seven times, with efficiencies for n-type TOPCon, p-type TOPCon and n-type HJT cells reaching 25.21 percent, 25.19 percent and 26.30 percent respectively.