Trina Solar announced that its State Key Laboratory (SKL) of PV Science and Technology (PVST) has set a new record in solar cell efficiency.
Trina Solar achieved 25.04 percent total-area efficiency for a large-area (243.18 cm2) n-type mono-crystalline silicon (c-Si) Interdigitated Back Contact (IBC) solar cell, with open-circuit voltage up to 715.6 mV.
Japan Electric Safety and Environmental Technology Laboratory (JET) has independently certified the result.
Solar cell features
# an open-circuit voltage Vocof 715.6 mV
# a short-circuit current density Jsc of 42.27 mA/cm2
# a fill factor FF of 82.81 percent
Trina Solar said the IBC solar cell has the highest cell efficiency for mass production c-Si solar cell. The n-type mono-crystalline silicon solar cell was fabricated on a large-sized industrial phosphorous-doped Cz Silicon substrate with a low-cost industrial IBC process, featuring conventional tube doping technologies and screen-printed metallization.
The 6-inch solar cell reached a total-area efficiency of 25.04 percent as measured by JET in Japan. The IBC solar cell has a total measured area of 243.18cm2 and was measured without any aperture.
The first single-junction c-Si solar cell developed in China achieved an efficiency above 25 percent. It has been demonstrated to be the highest efficiency c-Si single junction solar cell based on a 6-inch large-area c-Si substrate.
Trina Solar aims to be a global leader of Energy Internet of Things.