BRC Solar has revolutionized the photovoltaic market with its power optimizer, increasing energy yield and performance of PV plants and systems.
Designing-in Efficient Power Conversion’s EPC2218 100 V FETs into its next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact. The small parasitic capacitance and inductance of the GaN FETs creates a clean switching performance which allows good EMI behavior in the field. Another benefit of the GaN FETs is the zero reverse recovery losses.
The EPC2218 is a 100 V GaN FET, 3.2 mΩ, 231 Apulsed, with a small footprint of just 3.5 mm x 1.95 mm, offering lower losses and smaller size than comparable silicon MOSFETs for increased power density.
BRC’s previous range, the M400/12, handled currents up to 12 Amps and a maximum power operation at 400 watts. By changing from Si FETs to GaN FETs the company achieved an increase of output current to 14 Amps with a power rating of 500 watts – while keeping the same board size.
The switching frequency in the M500/14 is twice as high than the previous generation allowing for passive components, such as capacitors and inductors, to be decreased in value or even completely removed.